Semiconductor device including an epitaxial layer on a...

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H - Electricity

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356/178

H01L 21/20 (2006.01)

Patent

CA 1272527

SEMICONDUCTOR DEVICE INCLUDING AN EPITAXIAL LAYER ON A LATTICE-MI SMATCHED SINGLE CRYSTAL SUBSTRATE Abstract Dislocation-free epitaxial layers on the surfaces of lattice mi smatched single crystal substrates, such as germanium or gallium arsenide on silicon, can be grown provided the surfaces are suitably patterned, such as castellated or porous.

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