Semiconductor device including mosfet having band-engineered...

Details Semiconductor device including mosfet having band-engineered... Semiconductor device including mosfet having band-engineered...

H - Electricity

01

L

H01L 29/15 (2006.01) H01L 29/10 (2006.01)

Patent

CA 2530065

A semiconductor device includes a substrate, and at least one MOSFET adjacent the substrate. The MOSFET may include a superlattice channel that, in turn, includes a plurality of stacked groups of layers. The MOSFET may also include source and drain regions laterally adjacent the superlattice channel, and a gate overlying the superlattice channel for causing transport of charge carriers through the superlattice channel in a parallel direction relative to the stacked groups of layers. Each group of the superlattice channel may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and an energy band-modifying layer thereon. The energy- band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions so that the superlattice channel may have a higher charge carrier mobility in the parallel direction than would otherwise occur.

Dispositif à semi-conducteur comprenant un substrat et au moins un transistor MOSFET contigu à ce substrat. Ce transistor MOSFET peut comporter un canal de super-réseau qui, à son tour, comporte une pluralité de groupes de couches empilées. Le transistor MOSFET peut également posséder des zones de source et de drain latéralement contiguës au canal de super-réseau, ainsi qu'une grille surplombant ledit canal afin de déclencher le transport des porteurs de charge à travers ce canal dans un sens parallèle aux groupes de couches empilées. Chaque groupe de canal de super-réseau peut comprendre une pluralité de monocouches empilées de semi-conducteur de base définissant une partie semi-conductrice de base que recouvre une couche de modification de bande d'énergie. Cette couche de modification de bande d'énergie peut comporter au moins une monocouche non semi-conductrice contrainte à l'intérieur d'un réseau cristallin de parties semi-conductrices de base contiguës, de sorte que le canal de super-réseau peut présenter une mobilité de porteurs de charge supérieure dans un sens parallèle qu'il ne serait possible autrement.

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