Semiconductor device isolation

Details Semiconductor device isolation Semiconductor device isolation

H - Electricity

01

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356/162

H01L 21/469 (2006.01) H01L 27/118 (2006.01) H01L 29/06 (2006.01) H01L 29/788 (2006.01)

Patent

CA 2014048

In a semiconductor device having at least two conductive layers disposed close to each other on an element isolating insulation film formed on a first P-type region, a second P-type region is formed in a region of the first P-type region which is between the two conductive layers. The impurity concentration of the second P-type diffusion region is higher than the first P-type region. A region of the element isolating insulation film which is on the second P-type diffusion region is thin to form a thin insulation film. With the features, no inversion layer is formed in the region of the first P-type region where the second P-type diffu- sion region is formed. As a result, the inversion layers under the conductive layers will not be in con- tact with each other.

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