H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 33/00 (2006.01) G02F 1/015 (2006.01) H01L 29/68 (2006.01)
Patent
CA 2085361
2085361 9219017 PCTABS00017 The present invention provides a semiconductor device comprising: a first layer of semiconductor material of the one conductivity type; a second layer of semiconductor material of the other conductivity type; and a structure for resonant tunneling between the first and second layer of semiconductor material. The resonant tunneling structure (RTS) makes use of the extremely rapid tunneling effect wherein charge carriers tunnel through an energy barrier. The tunneling time is decisive here and not the radiative recombination. Extremely rapid optical oscillations can be obtained herewith with a frequency for instance in the region of 750 GHz. Electrical oscillations of such frequencies have already been realized.
Borghs Gustaaf
Genoe Jan
Van Hoof Chris
Borghs Gustaaf
Fetherstonhaugh & Co.
Genoe Jan
Interuniversitair Micro-Elektronica Centrum Vzm
Interuniversitair Micro-Elektronica Centrum Vzw
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