Semiconductor device made by epitaxial growth

Details Semiconductor device made by epitaxial growth Semiconductor device made by epitaxial growth

H - Electricity

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L

356/178

H01L 21/20 (2006.01) C30B 25/16 (2006.01)

Patent

CA 1145065

1 PHN 9316 ABSTRACT: Growth of a layer from the vapour phase is con- trolled at low temperatures by reactions. The result is a homogeneously thick layer. At high temperatures the layer growth is controlled by diffusion in the gaseous phase. The homogeneity of the thickness may then present problems. At low pressure the temperature range over which the growth is determined kinetically is larger but the temperature is then still too low for monocrystalline growth. According to the invention, for homogeneously thick monocrystalline growth there is started from a gas mixture which is in equilibrium with the material to be grown and growth takes place in a temperature gradient in the direction of flow of the gas mixture.

341796

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