Semiconductor device made by ion implantation

Details Semiconductor device made by ion implantation Semiconductor device made by ion implantation

H - Electricity

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H01L 27/12 (2006.01) H01L 21/265 (2006.01) H01L 21/762 (2006.01) H01L 21/86 (2006.01) H01L 29/06 (2006.01) H01L 29/786 (2006.01)

Patent

CA 1095183

Specification Specification Title of the Invention SEMICONDUCTOR DEVICE MADE BY ION IMPLANTATION Abstract of the Disclosure The semiconductor device is suitable to fabricate an integrated circuit. A SiO2 insulating film is formed on one surface of a silicon substrate and a buried SiO2 layer is formed at a depth from the other surface of the substrate. A plurality of regions diffused with an impu- rity and used to fabricate a transistor is formed in a layer of the-substrate between the burried SiO2 layer and the other surface of the substrate. A plurality of electrodes-are formed on the other surface of the subst- rate so as to use said regions as the component elements of the transistor.

297435

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