Semiconductor device manufacture

Details Semiconductor device manufacture Semiconductor device manufacture

C - Chemistry, Metallurgy

30

B

148/3.2

C30B 35/00 (2006.01) H01L 21/00 (2006.01) H01L 21/3063 (2006.01) H01L 29/00 (2006.01)

Patent

CA 1057172

ABSTRACT OF THE DISCLOSURE Manufacture of a semiconductor mesa device such as a TRAPATT diode using etching techniques. The mesa is first formed on a higher conductivity substrate by etching through an epitaxial layer, after which the mesa is undercut and given a positive bevel by further etching. The whole etching process may be effected by gas plasma etching, or the bevelling may be effected by electrolytic etching. Shadow masking by the bevelled side of the mesa can be used during implantation in and contacting of the mesa. A Si3N4 etchant mask on the epitaxial layer can also protect during oxidation to passivate the mesa side faces. Figure 3 is suitable for publication. -18-

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