G - Physics – 03 – F
Patent
G - Physics
03
F
G03F 9/00 (2006.01) H01L 21/70 (2006.01) H01L 23/544 (2006.01)
Patent
CA 2303019
A method of forming markers in manufacture with excellent productivity of a semiconductor device capable of forming the markers accurately aligned with the crystal direction in the same position of a semiconductor crystal substrate is provided. There is a marker forming method of forming a stepper marker pattern part (202) on the main surface of a semiconductor crystal substrate (101), and a mask (201) for exposure is overlaid on the position where segment-shaped patterns (205) formed on the main surface of the mask (201) for exposure match with a cleavage orientation flat (102) of the semiconductor crystal substrate (101), and the stepper marker pattern part is transferred by contact exposure. Because of this, the stepper marker pattern part. (202) can be formed in the same position within the semiconductor crystal substrate (101). As a result of this, by using a stepper aligner with an automatic alignment function, operating efficiency of an exposure process improves and high productivity can be obtained.
Corporation Nec
Nec Compound Semiconductor Devices Ltd.
Smart & Biggar
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