Semiconductor device of the hetero-junction transistor type

Details Semiconductor device of the hetero-junction transistor type Semiconductor device of the hetero-junction transistor type

H - Electricity

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356/149

H01L 29/76 (2006.01) H01L 29/205 (2006.01)

Patent

CA 1210527

PHF 82-502 16 ABSTRACT: The invention relates to a semiconductor device of the hetero-junction transistor type comprising a stack of semiconductor layers which by combination constitute three source, drain and gate regions, while the current path between the said source and drain regions is sub- stantially at right angles to the various junctions, characterized in that the gate region constitutes an elec- tron accumulation region in the form of a two-dimensional quasi Fermi-Dirac gas which can be brought to the desired polarization potential of at least one gate electrode, while the electrons forming the source-drain current transverse this electron cloud without having a strong interaction with it, in ballistic or quasi ballistic con- ditions.

419430

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