Semiconductor device passivation

Details Semiconductor device passivation Semiconductor device passivation

H - Electricity

01

L

356/143

H01L 23/29 (2006.01) H01L 21/312 (2006.01) H01L 21/316 (2006.01) H01L 21/318 (2006.01)

Patent

CA 1135874

SEMICONDUCTOR DEVICE Abstract of the Disclosure The invention relates to semiconductor devices such as ICs and LSIs. When such devices are encased in plastic an intervening passivation layer must be provided to act as a barrier against moisture and impurities. The passi- vation layers used in the past have been unsatisfactory and, in particular, tend to crack. The invention provides a novel passivation layer comprising silicon nitride con- taining 0.8 - 5.9 weight-% of hydrogen. The novel layer is an effective barrier and has much reduced tendency to crack.

331729

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