Semiconductor device shielded by an array of electrically...

Details Semiconductor device shielded by an array of electrically... Semiconductor device shielded by an array of electrically...

H - Electricity

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L

H01L 23/60 (2006.01) H01L 21/28 (2006.01) H01L 23/52 (2006.01) H01L 23/522 (2006.01) H01L 23/58 (2006.01)

Patent

CA 2248141

Low-resistant contacts (205) are made from the surface of a semiconductor component (201), down into the substrate (203) thereof, by means of etching a hole down into the substrate (203), which then, for example, by means of CVD deposition is filled with a metal, e.g. tungsten. Moreover, by further locating such substrate contacts at close distances around a component (201) or a block or a group of components, a very good electrical shielding against other components or blocks of components located on the same substrate is obtained. Shielding can also be obtained vertically upwards by means of applying a metal layer on top of the component. The metal plugs obtained in this manner can also be used for lateral shielding of electrical signal conductors in a semiconductor structure.

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