H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/138
H01L 21/82 (2006.01) G01F 1/684 (2006.01) G01F 1/696 (2006.01) G01F 1/699 (2006.01) G01N 27/414 (2006.01) H01L 21/306 (2006.01) H01L 27/16 (2006.01) H01L 29/04 (2006.01)
Patent
CA 1236931
ABSTRACT Disclosed is an integrated semiconductor device and a method for fabricating the device. The device comprises a semiconductor body with a first surface having a predetermined orientation with respect to a crystalline structure in the semiconductor body. The semiconductor body has a depression formed into the first surface of the body. A layer of thin film material covers at least a portion of the first surface. A thin film member comprising the layer of material has a predetermined configuration bridging the depression. The member is connected to the first surface at substantially opposing ends of the predetermined configuration. The depression opens to the first surface along an edge on each side of the member. The layer of thin film material comprises first and second openings, the first opening being bounded in part by one edge of the member, the second opening being bounded in part by the other edge of the member. Both openings are also bounded in part by a boundary connected to an edge of the member. At least one of the boundaries has a predetermined boundary configuration formed so that, when an anisotropic etch is placed on the openings to undercut the member and form the depression, there will be no substantial undercutting of the semiconductor body below the thin film material at the predetermined boundary configuration.
484981
Bohrer Philip J.
Higashi Robert E.
Johnson Robert G.
Honeywell Inc.
Smart & Biggar
LandOfFree
Semiconductor device structure and processing by means of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device structure and processing by means of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device structure and processing by means of... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1262419