Semiconductor device with built-up low resistance contact

Details Semiconductor device with built-up low resistance contact Semiconductor device with built-up low resistance contact

H - Electricity

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356/174

H01L 23/48 (2006.01) H01L 21/60 (2006.01) H01L 23/482 (2006.01) H01L 23/485 (2006.01)

Patent

CA 1197629

SEMICONDUCTOR DEVICE WITH BUILT-UP RESISTANCE CONTACT ABSTRACT OF THE DISCLOSURE A semiconductor device having a particularly low resistance connection to a portion thereof carrying substantial current is described. First and second interdigitated electrodes are provided on a major surface of the semiconductor, the first electrode providing lateral contact to a control region of the semiconductor device; the second electrode providing low impedance vertical contact to the high current carrying region. A conductive plate is supported between upstanding spaced apart portions of the second electrode and is thereby vertically spaced apart from the first electrode.

404965

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