H - Electricity – 01 – S
Patent
H - Electricity
01
S
356/172
H01S 5/22 (2006.01) H01S 5/20 (2006.01)
Patent
CA 1304832
ABSTRACT OF THE DISCLOSURE A semiconductor device having a current blocking layer and current confinement window formed in a semiconductor layer, and an electrode metal layer disposed on said current blocking layer and current confinement window, wherein the current blocking layer is made of semiconductor material, and the contact resistance of the current blocking layer and the electrode metal layer is higher than the contact resistance of the electrode metal layer and the semiconductor layer, and/or the resistivity of the current blocking layer is higher than that of the semiconductor layer.
602071
Fukushima Toru
Ogai Mikio
Takabayashi Tsunehisa
Ridout & Maybee Llp
The Furukawa Electric Co. Ltd.
LandOfFree
Semiconductor device with current blocking layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device with current blocking layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with current blocking layer will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1274268