Semiconductor device with hole conduction via strained lattice

Details Semiconductor device with hole conduction via strained lattice Semiconductor device with hole conduction via strained lattice

H - Electricity

01

L

356/149

H01L 29/76 (2006.01) H01L 29/205 (2006.01) H01L 29/43 (2006.01) H01L 29/778 (2006.01)

Patent

CA 1236590

SEMI CONDUCTOR DEVICE WITH HOLE CONDUCTION VIA STRAINED LATTICE ABSTRACT A field-effect transistor includes a conduction channel between a source terminal and a drain terminal, which channel employs holes as the charge carriers. The conduction channel is disposed within a layer of material comprising a group III-V compound of the periodic table and having a crystalline lattice structure which is stressed in two dimensions by means of epitaxial growth upon a thicker and rigid supporting layer comprising a different group III-V compound having a larger lattice spacing. The layer having the conduction channel is relatively thin being on the order of a few electron wavelength in thickness. The stretching of the layer having the conduction channel shift the energy levels of holes therein to remove the degenerate state thereof, thereby elevating light holes to an energy level characterized by increased mobility.

501112

Affiliated with

Also associated with

Rating

Semiconductor device with hole conduction via strained lattice does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with hole conduction via strained lattice, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with hole conduction via strained lattice will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1210746