Semiconductor device with layer of refractory material

Details Semiconductor device with layer of refractory material Semiconductor device with layer of refractory material

H - Electricity

01

L

356/133, 328/193

H01L 27/00 (2006.01) H01L 21/033 (2006.01) H01L 23/522 (2006.01) H01L 23/532 (2006.01) H01L 27/02 (2006.01) H01L 29/40 (2006.01) H03K 19/091 (2006.01)

Patent

CA 1094692

ABSTRACT: The invention relates to a semiconductor device in which a crossing connection is realized by using parts of a layer of refractory conductive material already present for masking as a part of a current conductor separated from a crossing conductor by an insulation layer. The mask of refractory material may also define the regions in which switching transistors are realized. The invention presents important advantages, inter alia in connection with density and crossing connections, in particular in I2L-circuits. -25-

294799

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