H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 29/02 (2006.01) H01L 21/38 (2006.01)
Patent
CA 2290048
A method of fabricating a semiconductor device having active components grown on a substrate, involves providing a semiconductor substrate on which the active components are grown, and doping the semiconductor substrate to render it non conductive and thereby reduce parasitic capacitance between active components thereon. The components typically comprise a VCSEL and monitor. The doped substrate reduces parasitic capacitance.
Jonsson Jan
Wickstrom Mikael
Marks & Clerk
Mitel Semiconductor Ab
LandOfFree
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