Semiconductor device with low parasitic capacitance

Details Semiconductor device with low parasitic capacitance Semiconductor device with low parasitic capacitance

H - Electricity

01

L

H01L 29/02 (2006.01) H01L 21/38 (2006.01)

Patent

CA 2290048

A method of fabricating a semiconductor device having active components grown on a substrate, involves providing a semiconductor substrate on which the active components are grown, and doping the semiconductor substrate to render it non conductive and thereby reduce parasitic capacitance between active components thereon. The components typically comprise a VCSEL and monitor. The doped substrate reduces parasitic capacitance.

Affiliated with

Also associated with

Rating

Semiconductor device with low parasitic capacitance does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with low parasitic capacitance, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with low parasitic capacitance will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1604375