Semiconductor device with npn and pnp transistors

Details Semiconductor device with npn and pnp transistors Semiconductor device with npn and pnp transistors

H - Electricity

01

L

356/178

H01L 29/06 (2006.01) H01L 21/8224 (2006.01) H01L 27/082 (2006.01)

Patent

CA 1254671

ABSTRACT OF THE DISCLOSURE A semiconductor device with npn and pnp transistors, wherein the npn transistor is formed in an n-type epitaxial layer formed on a semiconductor substrate, and the pnp transistor is formed in an n-type semiconductor region formed in the n-type epitaxial layer, the n-type semiconductor region having a higher impurity concentration than that of the n-type epitaxial layer. Even if the thickness of the n-type transistor can be prevented, thereby obtaining a high-speed semiconductor device.

493970

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