H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/149
H01L 29/76 (2006.01) H01L 21/28 (2006.01) H01L 29/167 (2006.01) H01L 29/49 (2006.01) H01L 29/51 (2006.01) H01L 29/94 (2006.01)
Patent
CA 2040396
An insulated gate field-effect transistor or similar semiconductor-insulator-semiconductor structure has an increased time-dependent dielectric failure lifetime due to a reduction in the field across the gate insulator. The electric field in the gate insulator is reduced without degrading device performance by limiting the field only when the gate voltage exceeds its nominal range. The field is limited by lowering the impurity concentration in a poly- silicon gate electrode so that the voltage drop across the gate insulator is reduced. In order to avoid degrading the device performance when the device is operating with nominal voltage levels, a fixed charge is imposed at the interface between the gate electrode and the gate insulator, so at a gate voltage of about the supply voltage level the response changes to exhibit less increase in the drop across the gate insulator for higher voltages. Also, the impurity level in the gate electrode may be low enough so that the gate is in deep depletion for transient increases in gate voltage, thereby limiting the drop across the gate insulator.
Doyle Brian Seamus
Fishbein Bruce Jeffrey
Digital Equipment Corporation
Smart & Biggar
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