Semiconductor device with selectively diffused regions

Details Semiconductor device with selectively diffused regions Semiconductor device with selectively diffused regions

H - Electricity

01

L

H01L 31/0224 (2006.01) H01L 31/18 (2006.01)

Patent

CA 2276008

The present invention describes a method of manufacturing a semiconductor device, comprising a semiconductor substrate (2) in the shape of a slice, the method comprising the steps of: step I) selectively applying a pattern of a solids-based dopant source to a first major surface of said semiconducting substrate (2); step 2) diffusing the dopant atoms from said solids-based dopant source into said substrate (2) by a controlled heat treatment step in a gaseous environment surrounding said semi-conducting substrate (2), the dopant from said solids-based dopant source diffusing directly into said substrate (2) to form a first diffusion region (12) and, at the same time, diffusing said dopant from said solids-based dopant source indirectly via said gaseous environment into said substrate (2) to form a second diffusion region (15) in at least some areas of said substrate (2) not covered by said pattern; and step 3) forming a metal contact pattern (20) substantially in alignment with said first diffusion region (12) without having etched said second diffusion region (15) substantially.

La présente invention concerne un procédé de fabrication d'un dispositif semi-conducteur comportant un substrat semi-conducteur (2) en forme de tranche, ce procédé comportant les étapes consistant à: étape 1) appliquer de façon sélective un motif d'une source d'impuretés solides à une première surface principale dudit substrat semi-conducteur (2); étape 2) diffuser les atomes de dopage provenant de ladite source d'impuretés solides à l'intérieur dudit substrat (2) par une étape de traitement thermique régulé dans un environnement gazeux dans lequel se trouve ledit substrat semi-conducteur (2), les impuretés provenant de ladite source d'impuretés solides se diffusant directement à l'intérieur dudit substrat (2) pour former une première zone de diffusion (12) et, simultanément, diffuser lesdites impuretés provenant de ladite source d'impuretés solides de manière indirecte via ledit environnement gazeux, à l'intérieur dudit substrat (2) pour former une deuxième zone de diffusion (15) dans quelques zones au moins dudit substrat (2) non couvertes par ledit motif; et étape 3) former un motif de contact métallique (20) sensiblement aligné avec ladite première zone de diffusion (12) sans avoir gravé sensiblement ladite deuxième zone de diffusion (15).

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