Semiconductor device with single crystal layer grown from...

Details Semiconductor device with single crystal layer grown from... Semiconductor device with single crystal layer grown from...

H - Electricity

01

L

356/90

H01L 29/78 (2006.01) H01L 21/20 (2006.01) H01L 21/822 (2006.01)

Patent

CA 1290077

ABSTRACT OF THE DISCLOSURE A semiconductor device has an insulated gate type transistor. The insulated gate type transistor is formed on an insulating surface of substrate. The insulated gate type transistor is formed in a single crystal layer which is grown from a single nucleus formed on nucleation region which is provided on said insulating surface, which has sufficiently greater nucleation density than material of said insulating surface and which has sufficiently small size so that only one nucleus can be grown.

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