Semiconductor device with underpass interconnection zone

Details Semiconductor device with underpass interconnection zone Semiconductor device with underpass interconnection zone

H - Electricity

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356/76

H01L 21/74 (2006.01) H01L 21/32 (2006.01) H01L 21/822 (2006.01) H01L 23/535 (2006.01)

Patent

CA 1075372

ABSTRACT: In Locos N-channel MOST-IC's under- passes can be obtained below the locos pattern by performing, at the area where the underpasses are to be formed, an As or Sb implantation prior to providing the locos. By using the nitride mask as an implanta- tion mask, the locos and the source/drain zones of the transistors can be provided in a self-registering manner with respect to the underpasses. - 28 -

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