Semiconductor devices

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H - Electricity

01

L

356/93

H01L 43/00 (2006.01) G01R 33/06 (2006.01) H01L 29/82 (2006.01)

Patent

CA 1115854

ABSTRACT A semiconductor device incorporates a p-n-p-n structure of circular geometry, within which there may be formed a carrier domain which will rotate around the structure when an appropriate magnetic field is applied. The four regions of this structure are all bounded by a planar surface of the semiconductor, one end region being centrally disposed and the other forming an annular intrusion into the adjacent intermediate region, which is also of annular form and has contact made to it only outwardly of the annular intrusion. The device may be utilized in various ways in magnetic field sensors.

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