Semiconductor devices and method of manufacturing the same

Details Semiconductor devices and method of manufacturing the same Semiconductor devices and method of manufacturing the same

H - Electricity

01

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356/12, 356/172

H01L 21/28 (2006.01) H01L 21/768 (2006.01) H01L 23/532 (2006.01) H01L 29/40 (2006.01) H01L 29/41 (2006.01) H01L 29/45 (2006.01)

Patent

CA 1085969

Abstract of the disclosure The seminconductor device comprises a semi- conductor substrate, a polycrystalline silicon semi- conductor body extending upwardly from a portion of the surface of the semiconductor substrate and containing an impurity at a substationally uniform concentration, and a metal electrode disposed on the top surface of the polycrystalline silicon semiconductor body. The metal electrode extends in the lateral direction beyond the periphery of the top surface of the polycrystalline silicon semiconductor body.

282631

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