Semiconductor devices and method of manufacturing the same

Details Semiconductor devices and method of manufacturing the same Semiconductor devices and method of manufacturing the same

H - Electricity

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356/148, 356/178

H01L 29/70 (2006.01) H01L 21/033 (2006.01) H01L 21/3213 (2006.01) H01L 21/3215 (2006.01) H01L 21/331 (2006.01) H01L 21/467 (2006.01) H01L 29/76 (2006.01)

Patent

CA 1129118

Abstract of the Disclosure In a semiconductor device such as a bipolar transistor and a field effect transistor of the type having a substrate, a doped polycrystalline silicon region selectively formed on the substrate and an insulating film overlying the polycrystalline silicon region, the region is shaped as mesa having side sur- faces having a negative coefficient of gradient between the substrate and the top of the mesa.

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