Semiconductor devices and methods

H - Electricity – 01 – L

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H01L 21/20 (2006.01) H01L 21/203 (2006.01) H01L 21/28 (2006.01) H01L 21/316 (2006.01) H01L 21/336 (2006.01) H01L 29/20 (2006.01) H01L 29/51 (2006.01) H01S 5/16 (2006.01) H01S 5/22 (2006.01) H01S 5/223 (2006.01) H01S 5/323 (2006.01) H01S 5/343 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2187354

By implementing oxidation to obtain a native oxide of aluminum (581, 582) after a device has been metallized (505, 565), advantages can be obtained in device operation, reliability, and life. A method of making a semiconductor device is disclosed and includes the following steps: forming a structure comprising layers of III-V semiconductor material, at least one of the layers being an aluminum-bearing III-V semiconductor material (530, 550); applying metal electrodes (505, 565) to the structure to form a metallized semiconductor structure; and heating the metallized structure in a water-containing environment to convert a portion of the aluminum-bearing III-V semiconductor material to a native oxide of aluminum (581, 582).

En procédant à une oxydation pour obtenir un oxyde d'aluminium naturel (581, 582) après avoir métallisé (505, 565) un dispositif, on peut obtenir des avantages relatifs au fonctionnement, à la fiabilité et à la durée de vie d'un dispositif. L'invention se rapporte à un procédé de fabrication d'un dispositif à semi-conducteurs qui consiste à former une structure comprenant des couches de matériau semi-conducteur des groupes III à V, au moins une des couches étant un matériau semi-conducteur (530, 550) appartenant aux groupes III à V porteur d'aluminium, à appliquer des électrodes métalliques (505, 565) à la structure afin d'obtenir une structure semi-conductrice métallisée, et à chauffer la structure métallisée dans un environnement contenant de l'eau afin de transformer une partie du matériau semi-conducteur des groupes III à V porteur d'aluminium en un oxyde d'aluminium naturel (581, 582).

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