Semiconductor devices, and methods for same

Details Semiconductor devices, and methods for same Semiconductor devices, and methods for same

H - Electricity

01

L

H01L 21/265 (2006.01) H01L 21/30 (2006.01) H01L 21/324 (2006.01) H01L 21/336 (2006.01) H01L 29/30 (2006.01)

Patent

CA 2243170

Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices (11) comprising a semiconductor (12) containing one or more elements from Group III, IV or V of the periodic table, a semiconductive layer (13, 14), and insulative layer (17), and a conductive layer (20).

Cette invention concerne des processus préférés de conditionnement de dispositifs à semi-conducteur à l'aide de deutérium, lesquels permettent d'améliorer les caractéristiques fonctionnelles et de réduire la dépassivation qui se produit lors du fonctionnement du dispositif. Cette invention concerne également des dispositifs à semi-conducteur (11) qui comprennent un semi-conducteur (12) contenant un ou plusieurs éléments choisis dans les Groupes III, IV ou V de la table de classification périodique, et qui comprennent également une couche semi-conductrice (13, 14), une couche isolante (17), ainsi qu'une couche conductrice (20).

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