Semiconductor devices and methods of making same

Details Semiconductor devices and methods of making same Semiconductor devices and methods of making same

H - Electricity

01

L

H01L 29/36 (2006.01) H01L 21/20 (2006.01) H01L 29/12 (2006.01)

Patent

CA 2551209

A composite structure (16) having a silicon carbide epitaxial layer is provided. The epitaxial layer includes at least four regions arranged vertically and defining respective interfaces, where each of the regions is characterized by a respective impurity concentration, where the impurity concentrations vary across each of the interfaces, and where each of the impurity concentrations exceeds 1×10 17 cm-3 for at least one single impurity in all of the regions.

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