C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
356/181
C30B 25/02 (2006.01) H01L 21/205 (2006.01) H01L 33/00 (2006.01) H01S 5/227 (2006.01) H01S 5/24 (2006.01) H01S 5/223 (2006.01)
Patent
CA 1282874
Abstract The present invention relates to a method of fabricating a device which includes an iron-doped, indium-based, compound Group III-V semiconductor region. The method is comprised of the steps of forming a precursor gas comprising a carrier gas, a volatile dopant compound, a volatile indium compound and a Group V hydride; directing the precursor gas through a heated chamber to contact a heated deposition body; and inducing deposition of the compound semiconductor on the body. The carrier gas comprises an inert gas, the dopant compound includes iron and the concentration of hydrogen in the precursor gas is limited to prevent excessive precipitation of iron. The concentrations of the volatile indium compound at the body and of the Group V hydride are maintained sufficient to result in the deposition.
556706
Johnston Wilbur Dexter Jr.
Long Judith Ann
Wilt Daniel Paul
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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