Semiconductor devices employing ti-doped group iii-v...

Details Semiconductor devices employing ti-doped group iii-v... Semiconductor devices employing ti-doped group iii-v...

H - Electricity

01

S

345/33

H01S 5/227 (2006.01) H01L 21/205 (2006.01) H01S 5/24 (2006.01) H01S 5/30 (2006.01) H01S 5/223 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1276276

Abstract of the Disclosure High resistivity Ti-doped Group III-V-based MOCVD layers are used to constrain current to flow through the active region of a variety of devices suchas CSBH and DCPBH lasers. (FIG. 1).

554417

Affiliated with

Also associated with

Rating

Semiconductor devices employing ti-doped group iii-v... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor devices employing ti-doped group iii-v..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices employing ti-doped group iii-v... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1294924