Semiconductor devices having dielectrically isolated...

Details Semiconductor devices having dielectrically isolated... Semiconductor devices having dielectrically isolated...

C - Chemistry, Metallurgy

30

B

148/3.4

C30B 1/08 (2006.01) H01L 21/20 (2006.01) H01L 21/268 (2006.01) H01L 21/762 (2006.01)

Patent

CA 1211342

- 18 - SEMICONDUCTOR DEVICES HAVING DIELECTRICALLY ISOLATED SEMICONDUCTOR AREAS Abstract Dielectrically isolated regions of single crystal silicon are produced through the use of a specific melting process. In this process, a substrate having regions of single crystal silicon contacting regions of non-single crystal silicon that overlie a dielectric materiel are treated. In particular, the entire region(s) of non-single crystal silicon is melted utilizing primarily radiant energy. Cooling is then initiated and the molten silicon is converted into a region of single crystal material. Isolation is completed by removing the appropriate regions of single crystal silicon.

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