Semiconductor devices having fe-doped mocvd inp-based layer

Details Semiconductor devices having fe-doped mocvd inp-based layer Semiconductor devices having fe-doped mocvd inp-based layer

H - Electricity

01

S

345/33, 345/51

H01S 5/24 (2006.01) H01S 5/223 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1262768

Abstract High resistivity Fe-doped InP-based MOCVD layers are used to constrain current to flow through the active region of a variety of devices such as CSBH and DCPBH lasers.

484081

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