Semiconductor devices having thermal spacers

Details Semiconductor devices having thermal spacers Semiconductor devices having thermal spacers

H - Electricity

01

L

H01L 29/812 (2006.01) H01L 29/06 (2006.01)

Patent

CA 2554944

A high power, high frequency semiconductor device has a plurality of unit cells connected in parallel. The unit cells each having a controlling electrode and first and second controlled electrodes. A thermal spacer (i.e. an electrically inactive region) divides at least one of the unit cells into a first active portion and a second active portion, spaced apart from the first potion by the thermal spacer. The controlling electrode and the first and second controlled electrodes of the unit cell cross over the first thermal spacer.

Cette invention se rapporte à un dispositif à semi-conducteur haute fréquence de puissance élevée, qui comprend plusieurs cellules unitaires connectées en parallèle. Ces cellules unitaires comportent chacune une électrode de commande et des première et seconde électrode commandées. Un séparateur thermique divise au moins l'une des cellules unitaires en une première partie active et une seconde partie active, séparée de la première partie par un séparateur thermique. L'électrode de commande et les première et seconde électrodes commandées de la cellule unitaire croisent le premier séparateur thermique.

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