H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/335 (2006.01) H01L 29/778 (2006.01)
Patent
CA 2651670
Methods of forming semiconductor devices are provided by forming a semiconductor layer on a semiconductor substrate. A mask is formed on the semiconductor layer. Ions having a first conductivity type are implanted into the semiconductor layer according to the mask to form implanted regions on the semiconductor layer. Metal layers are formed on the implanted regions according to the mask. The implanted regions and the metal layers are annealed in a single step to respectively activate the implanted ions in the implanted regions and provide ohmic contacts on the implanted regions. Related devices are also provided.
L'invention concerne des procédés de formation de dispositifs semi-conducteurs qui consistent à former une couche semi-conductrice sur un substrat semi-conducteur, former un masque sur la couche semi-conductrice, implanter des ions présentant un premier type de conductivité dans la couche semi-conductrice en fonction du masque pour former des régions implantées sur la couche semi-conductrice, former des couches métalliques sur les régions implantées en fonction du masque, et recuire les régions implantées et les couches métalliques en une seule étape pour respectivement activer les ions implantés dans les régions implantées et créer des contacts ohmiques sur les régions implantées. L'invention concerne également des dispositifs associés.
Saxler Adam William
Sheppard Scott
Cree Inc.
Sim & Mcburney
LandOfFree
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