Semiconductor devices using genetically grown films of...

Details Semiconductor devices using genetically grown films of... Semiconductor devices using genetically grown films of...

H - Electricity

01

L

356/117

H01L 21/265 (2006.01) H01L 21/00 (2006.01) H01L 21/31 (2006.01) H01L 21/314 (2006.01) H01L 21/32 (2006.01) H01L 21/8234 (2006.01) H01L 23/29 (2006.01) H01L 27/088 (2006.01) H01L 29/00 (2006.01) H01L 29/51 (2006.01)

Patent

CA 1068010

ABSTRACT: The invention relates to a method of manufacturing a semiconductor device in which a surface of a semiconductor region consisting of silicon is provided at least partly with a silicon oxide-containing layer. According to the invention, the silicon region is subsequently subjected to a nitridation treatment in which a zone consisting of a nitrogen-containing material is formed between the silicon oxide layer and the silicon region. The said zone plays an essential part in a further phase of the manufacture and/or in the manufactured semi- conductor device.

253508

Affiliated with

Also associated with

Rating

Semiconductor devices using genetically grown films of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor devices using genetically grown films of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices using genetically grown films of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-503171