Semiconductor devices with improved heat radiation and...

Details Semiconductor devices with improved heat radiation and... Semiconductor devices with improved heat radiation and...

H - Electricity

01

S

356/158, 345/33

H01S 3/04 (2006.01) H01L 21/00 (2006.01) H01L 23/485 (2006.01) H01L 29/00 (2006.01) H01L 29/872 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1049127

Abstract of the Disclosure A semiconductor laser is made by sequential liquid- phase epitaxial growth on a semiconductor, e.g., n-type GaAs, substrate, including sequentially forming a first layer, e.g., of n-type CaAlAs; a second layer, e.g., of n-type or p-type GaAs as active region; a third layer, e.g., of p-type GaAlAs; said first to third layers forming a doublehetero-structure; a fourth layer, e.g., of p+-type GaAs; and a fifth layer, e.g., of n-type GaAlAs. The fifth layer is chemically etched to form a groove or narrow window therein so as to expose a portion of the fourth layer at the bottom of the groove, and a metal electrode is provided embedded in said groove. The fifth layer, which is instead of the conventional oxide film, serves as an isolation layer. However, the fifth layer being an epitaxially grown GaAlAs layer, has better thermal conduc- tivity than an oxide film. Therefore, when a suitable heat- sink means or heat-radiation means is provided thereon, a laser of good heat radiation characteristics is obtainable, enabling production of higher power continuous wave laser. The etching for forming the groove is easily effected by chemically etching the desired layer by utilizing the difference in etching speed for different layers of hetero-structure.

220991

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