Semiconductor diode lasers with improved beam divergence...

Details Semiconductor diode lasers with improved beam divergence... Semiconductor diode lasers with improved beam divergence...

H - Electricity

01

S

H01S 5/00 (2006.01) H01S 5/20 (2006.01) H01S 5/32 (2006.01)

Patent

CA 2398829

A semiconductor diode laser has a characteristic output with a single mode vertical farfield divergence. The semiconductor diode laser includes a waveguide (103) with a first refractive index and a quantum well (104) embedded in the center of the waveguide. On one side of the waveguide (103) sits a p-type cladding layer (105) with a second refractive index smaller than the first refractive index. On the other side of the waveguide (103) sits an n- type cladding layer (102) with a third refractive index smaller than the first refractive index and larger than the second refractive index.

L'invention concerne un laser à diode à semi-conducteurs dont la sortie caractéristique est dotée d'une divergence de champ lointain à un seul mode vertical. Le laser à diode à semi-conducteurs comprend un guide d'ondes (103) pourvu d'un premier indice de réfraction et d'un puits quantique (104) enchâssé au centre dudit guide d'ondes. Sur l'un des côtés du guide d'ondes (103), on peut trouver une couche de métallisation (105) de type P, dotée d'un second indice de réfraction inférieur au premier. Sur un autre côté du guide d'ondes (103), on trouve une couche de métallisation (102) de type N, pourvue d'un troisième indice de réfraction inférieur au premier et supérieur au second indice de réfraction.

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