Semiconductor element capable of withstanding high voltage...

Details Semiconductor element capable of withstanding high voltage... Semiconductor element capable of withstanding high voltage...

H - Electricity

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H01L 29/00 (2006.01) H01L 21/223 (2006.01) H01L 29/08 (2006.01) H01L 29/10 (2006.01) H01L 29/36 (2006.01)

Patent

CA 1111571

SEMICONDUCTOR ELEMENT CAPABLE OF WITHSTANDING HIGH VOLTAGE AND METHOD OF MANUFACTURING THE SAME ABSTRACT OF THE DISCLOSURE A semiconductor element such as a thyristor or a transistor which is capable of withstanding a high voltage comprises a semiconductor substrate of a pnpn-four layer structure (for a thyristor) or of a npn-three layer structure (for a transistor). An intermediate p-type layer is composed of a low con- centration layer region located adjacent to an n-type layer and a high concentration layer region located adjacent to the other n-type layer. The high con- centration layer region is formed through diffusion of aluminium so that the maximum concentration thereof becomes at least equal to 5 x 1016 atoms/cm3. A method of manufacturing such semiconductor element is also disclosed.

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