Semiconductor element manufacturing process

Details Semiconductor element manufacturing process Semiconductor element manufacturing process

H - Electricity

01

L

H01L 21/302 (2006.01) H01L 21/304 (2006.01) H01L 21/306 (2006.01) H01L 21/78 (2006.01)

Patent

CA 2050675

Abstract of the Disclosure There is disclosed a method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor element an one of major surfaces of a GaAs substrate; a grinding the substrate to make the GaAs substrate to a predetermined thickness by grinding the other surface of the GaAs substrate with a grinding stone having an average grain size of 6 micro-meters or larger; and an chemical etching the other surface of the substrate by 0.6 micro-meters or more just after the grinding step, without any further grinding treatment done on the other surface, just after the grinding step.

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