Semiconductor element with a passivation layer and method...

Details Semiconductor element with a passivation layer and method... Semiconductor element with a passivation layer and method...

H - Electricity

01

L

H01L 23/29 (2006.01) H01L 31/0304 (2006.01) H01L 31/103 (2006.01)

Patent

CA 2572691

The invention relates to a semiconductor element containing AlxGayIn1-x- yAszSb1-z, whereby x, y and z are selected such that a band gap of less than 350 meV is produced, with a mesa-structuring and, on at least one lateral surface of the structuring, a passivation layer containing AlnGa1-nAsmSb1-m is at least partly applied and n is selected in the range 0.4 to 1 and m in the range 0 to 1.

L'invention concerne un élément semi-conducteur, qui contient AlxGayIn1-x-yAszSb1-z, les paramètres x, y et z sont sélectionnés, de sorte qu'un écart énergétique inférieur à 350 meV est produit, comprenant une structure mesa et sur une surface latérale de la structure, une couche de passivation contenant AlnGa1-nAsmSb1-m est au moins partiellement appliquée et n est compris entre 0,4 et 1 et m est compris entre 0 et 1.

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