Semiconductor epitaxial substrate

Details Semiconductor epitaxial substrate Semiconductor epitaxial substrate

H - Electricity

01

L

H01L 21/205 (2006.01) H01L 21/335 (2006.01) H01S 5/323 (2006.01) H01S 5/32 (2006.01)

Patent

CA 2131696

A semiconductor epitaxial substrate, characterized in that a crystal is formed by epitaxial growth on a gallium arsenide single crystal substrate whose crystallographic plane azimuth is slanted from that of one of (100) planes at an angle of not more than 1°, that at least part of the epitaxial crystal is an In xGa(1-x)As crystal (wherein 0<x<1), and that the epitaxial growth is carried out by chemical vapor deposition. Since the In xGa(1-x)As layer has reduced microscopic unevenness and reduced variation in thickness, the epitaxial substrate of the present invention can be used as a channel layer of a field effect transistor or as an active layer of a semiconductor laser to endow these devices with excellent characteristics. -25-

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