Semiconductor epitaxial substrate and process for producing...

Details Semiconductor epitaxial substrate and process for producing... Semiconductor epitaxial substrate and process for producing...

H - Electricity

01

L

H01L 21/20 (2006.01) C30B 25/02 (2006.01) H01L 21/203 (2006.01)

Patent

CA 2126741

ABSTRACT OF THE DISCLOSURE A semiconductor epitaxial substrate and a process for producing the same, the semiconductor epitaxial substrate comprising a GaAs single-crystal substrate having thereon an InyGa(1-y)As (0,y?1) crystal layer as a channel layer, the composition and the thickness of the InyGa(1-y)As layer being in the ranges within the elastic deformation limit of crystals constituting the InyGa(1-y)As layer and the vicinity of the InyGa(1-y)As layer, the semiconductor epitaxial substrate further comprising a semiconductor layer between the channel layer and an electron donating layer for supplying electrons to the channel layer, the semiconductor layer having a thickness of from 0.5 to 5 nm and a bandgap width within the range of from the bandgap width of GaAs to the bandgap width of the electron donating layer. - 24 -

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