Semiconductor fabrication

Details Semiconductor fabrication Semiconductor fabrication

C - Chemistry, Metallurgy

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117/85, 148/3.5

C23C 16/42 (2006.01) H01L 21/314 (2006.01) H01L 21/316 (2006.01) H01L 21/56 (2006.01) H01L 23/29 (2006.01) H01L 23/31 (2006.01) H01L 23/532 (2006.01)

Patent

CA 1266805

ABSTRACT The use of arsenosilicate glass (ASG) as a dielectric layer in semiconductors, and methods of producing arsenosilicate glasses as conformal coatings are described. The ASG coatings may be produced as the result of heterogeneous reactions involving silane, arsine and oxygen. In multilevel semiconductors ASG may be used over the polysilicon gates, over aluminium metallisation and second dielectric layer, and/or over a second metallisation.

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