H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/182
H01L 21/363 (2006.01) C23C 14/58 (2006.01) C23C 16/56 (2006.01) H01L 21/203 (2006.01) H01L 21/205 (2006.01) H01L 21/30 (2006.01) H01L 31/20 (2006.01) C23C 14/06 (2006.01)
Patent
CA 2019923
Abstract of the Disclosure A method for forming an amorphous semiconductor film, which comprises (a) a film-forming step of forming a semiconductor film having not more than 20 atomic percent of bound hydrogen to a thickness of 3 to 1000 .ANG., and (b) a modifying step of modifying the formed film, the steps being repeated multiple times.
Ashida Yoshinori
Fukuda Nobuhiro
Koyama Masato
Miyachi Kenji
Kirby Eades Gale Baker
Mitsui Toatsu Chemicals Inc.
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