Semiconductor film and process for its production

H - Electricity – 01 – L

Patent

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356/182

H01L 21/363 (2006.01) C23C 14/58 (2006.01) C23C 16/56 (2006.01) H01L 21/203 (2006.01) H01L 21/205 (2006.01) H01L 21/30 (2006.01) H01L 31/20 (2006.01) C23C 14/06 (2006.01)

Patent

CA 2019923

Abstract of the Disclosure A method for forming an amorphous semiconductor film, which comprises (a) a film-forming step of forming a semiconductor film having not more than 20 atomic percent of bound hydrogen to a thickness of 3 to 1000 .ANG., and (b) a modifying step of modifying the formed film, the steps being repeated multiple times.

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