G - Physics – 01 – N
Patent
G - Physics
01
N
150/20
G01N 27/12 (2006.01)
Patent
CA 1286212
SEMICONDUCTOR GAS SENSOR HAVING THERMALLY ISOLATED SITE Abstract of the Disclosure A preferred semiconductor gas sensor of this invention features a gas interaction site comprising a gas sensitive semiconductor thin film and means for heating the film to an operative temperature. The thin film and heating means are carried upon a region of a substrate that is etched opposite the site to reduce the thickness of the region and thereby reduce heat flow from the region into a surrounding region.
524061
Chang Shih-Chia
Hicks David B.
Chang Shih-Chia
General Motors Corporation
Gowling Lafleur Henderson Llp
Hicks David B.
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