Semiconductor having large volume fraction of intermediate...

Details Semiconductor having large volume fraction of intermediate... Semiconductor having large volume fraction of intermediate...

H - Electricity

01

L

H01L 31/028 (2006.01) H01L 31/20 (2006.01) H05H 1/24 (2006.01)

Patent

CA 2274717

A high quality non-single-crystal silicon alloy material including regions of intermediate range order (IRO) silicon alloy material up to but not including the volume percentage required to form a percolation path within the material. The remainder of the material being either amorphous or a mixture of amorphous and microcrystalline materials. The materials were prepared by CVD using differing amounts of hydrogen dilution to produce materials containing differing amounts of IRO material. Preferably the material includes at least 8 volume percent of IRO material.

L'invention a trait à un matériau allié au silicium non monocristallin, de grande qualité, comportant des zones consistant en un matériau allié au silicium d'ordre intermédiaire allant jusqu'au pourcentage volumique exigé pour former un trajet de percolation au sein du matériau, mais sans renfermer, toutefois, ledit pourcentage. Le reste est constitué d'un matériau amorphe ou d'un mélange de matériaux amorphes et microcristallins. Ces matériaux sont produits grâce à une technique de dépôt chimique en phase vapeur faisant intervenir différentes quantités de dilutions d'hydrogène afin d'obtenir des matériaux renfermant différentes teneurs en matériau d'ordre intermédiaire (IRO). La teneur en matériau d'ordre intermédiaire est, de préférence, au moins égale à huit en pourcentage volumique.

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