Semiconductor heterojunction devices

Details Semiconductor heterojunction devices Semiconductor heterojunction devices

H - Electricity

01

L

356/149, 356/65

H01L 29/76 (2006.01)

Patent

CA 1255015

ABSTRACT The present invention relates to a semiconductor device with an n/n heterojunction formed between two layers of respectively an n-type IIIA-VA semiconductor compound and an n-type IIB-VIA semiconductor compound. The layers of the semiconductor device may be grown by the MOCVD process. The semiconductor device may be used for the construction of electronic components such as field effect transistors, diodes, photodetectors or the like.

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