H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/149
H01L 29/08 (2006.01) G11C 11/34 (2006.01) H01L 29/76 (2006.01)
Patent
CA 1216078
ABSTRACT OF THE DISCLOSURE A semiconductor hot electron transistor of the tunneling emitter type has an emitter layer, an insulating layer, a metallic or metallically conductive base layer, and a collector layer. The emitter layer is formed by an inversion layer generated in the channel region of a field effect transistor integrated on a semiconductor substrate between the source and drain regions of the field effect transistor. The base layer of the hot electron transistor includes at least one portion of the gate electrode of the field effect transistor. The hot electron transistor is operated by forming a depletion zone between the source and drain region of the field effect transistor by switching a voltage source connected to the gate electrode of the field effect transistor (which forms the base layer for the hot electron transistor), the voltage source alternating between two values one of which is above the threshold voltage for the field effect transistor. The hot electron transistor may also be operated by varying the source voltage as a function of an input signal.
461255
Aktiengesellschaft Siemens
Fetherstonhaugh & Co.
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