Semiconductor image sensor having ccd shift register

Details Semiconductor image sensor having ccd shift register Semiconductor image sensor having ccd shift register

G - Physics

11

C

345/1, 345/24

G11C 11/40 (2006.01) H01L 27/108 (2006.01) H01L 27/148 (2006.01) H01L 29/423 (2006.01) H03K 19/08 (2006.01)

Patent

CA 1056058

ABSTRACT OF THE DISCLOSURE A semiconductor image sensor as a sensing structure divided into vertical columns and horizontal rows of elemental sections. Each element includes a photo-sensor and a portion to receive charge overflow. The photo-sensors and portions to receive overflow are covered by a transparent electrode. Each elemental section in each vertical column is connected to a vertical shift register by a separate charge transfer section covered by a shift electrode structure to which two- phase clock pulses are applied. One end of all of the verti- cal shift registers is connected to a three-phase horizontal shift register. When the potential of a given photo-sensor is higher than that of the transfer section connected to it, light-generated carriers in the photo-sensor are transferred to the vertical shift register to which that transfer section is connected.

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