G - Physics – 11 – C
Patent
G - Physics
11
C
G11C 5/06 (2006.01) G11C 15/04 (2006.01)
Patent
CA 2077929
54 ABSTRACT OF THE DISCLOSURE A semiconductor integrated circuit which has a CAM structure based on nonvolatile memories and is capable of effectively suppressing through current and utilizable for forming a flexible CAM of large scale integration comprises a first memory cell for defining the electrical connection or otherwise the nonconnection between a first data line and an match line, a second memory cell for defining the electrical nonconnection or otherwise the connection between a second data line and the match line, a selective transistor for making and breaking the connection between each of the first and the second data lines and the match line in accordance with the definition of the connections of the first and second memory cells. The threshold voltage of the selective transistor has a predetermined value incorporated during the fabrication process. The semiconductor integrated circuit also has means for electrically connecting a selective word line connected to the gate electrode of the selective transistor to the match line and means for making the selective word line afloat or otherwise has no selective transistor. The threshold voltage of each nonvolatile memory forming each of the first and second memory cells is so regulated that it is set at a predetermined voltage. Therefore the semiconductor integrated circuit according to the present invention is capable of retrieving data from a number of memory cells at high speed without mutual interference and of providing an associative memory unit for use as a high-speed, large capacity data base.
Kawasaki Steel Corporation
Robic
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